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Kingston Server Memory (RAM) | KINGSTON 8GB DDR4 2666MHz | KVR26N19S8/8 | ServersPlus

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KINGSTON 8GB DDR4 2666MHz

KINGSTON Logo here

Manufacturer Part Code: KVR26N19S8/8

Order Code: SDKIN-KVR26N19S8

Category: Kingston Server Memory (RAM)

Kingston ValueRAM - DDR4 - 8 GB - DIMM 288-pin - 2666 MHz / PC4-21300 - CL19 - 1.2 V - unbuffered - non-ECC

This document describes ValueRAM's KVR26N19S8/8 is a 1G x 64-bit (8GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM), 1Rx8, memory module, based on eight 1G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-2666 timing of
19-19-19 at 1.2V. Each 288-pin DIMM uses gold contact fingers. The electrical and mechanical specifications are as follows:

- Power Supply: VDD=1.2V Typical
- VDDQ = 1.2V Typical
- VPP - 2.5V Typical
- VDDSPD=2.2V to 3.6V
- Nominal and dynamic on-die termination (ODT) for
- data, strobe, and mask signals
- Low-power auto self refresh (LPASR)
- Data bus inversion (DBI) for data bus
- On-die VREFDQ generation and calibration
- Single-rank
- On-board I2 serial presence-detect (SPD) EEPROM
- 16 internal banks; 4 groups of 4 banks each
- Fixed burst chop (BC) of 4 and burst length (BL) of 8
- via the mode register set (MRS)
- Selectable BC4 or BL8 on-the-fly (OTF)
- Fly-by topology
- Terminated control command and address bus
- PCB: Height 1.23? (31.25mm)
- RoHS Compliant and Halogen-Free


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Technical Information

Colour of product
Green
Cooling type
heatsink
RoHS compliance
Y
Halogen free
Y
Memory voltage
1.2 V
Internal memory type
DRAM
ECC
N
Module configuration
1024M x 64
Lead plating
Gold
CAS latency
19
Colour of product
Green
Memory clock speed
2666 MHz
Row cycle time
45.75 ns
Refresh row cycle time
350 ns
Row active time
32 ns
Memory voltage
1.2 V
Cooling type
heatsink
RoHS compliance
Y
SPD profile
Y
Memory form factor
288-pin DIMM
Windows operating systems supported
Y
Linux operating systems supported
Y
Memory ranking
1
Component for
PC/server
Halogen free
Y
Internal memory
8 GB
Memory layout (modules x size)
1 x 8 GB
Internal memory type
DRAM
ECC
N
Module configuration
1024M x 64
Lead plating
Gold
CAS latency
19
Memory clock speed
2666 MHz
Row cycle time
45.75 ns
Refresh row cycle time
350 ns
Row active time
32 ns
Memory voltage
1.2 V
SPD profile
Y
Memory form factor
288-pin DIMM
Unbuffered memory
Y
Memory ranking
1
Component for
PC/server
Internal memory
8 GB
Memory layout (modules x size)
1 x 8 GB
Storage temperature range (T-T)
-55 - 100 °C
Operating temperature range (T-T)
0 - 85 °C
Windows operating systems supported
Y
Mac operating systems supported
Y
Linux operating systems supported
Y
Cooling type
heatsink
Height
31.2 mm
Width
133.3 mm

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