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PC System Memory (RAM) | KINGSTON 4GB DDR3L 1600 1.35V Low Voltage SO-DIMM | KVR16LS11/4 | ServersPlus

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KINGSTON 4GB DDR3L 1600 1.35V Low Voltage SO-DIMM

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Manufacturer Part Code: KVR16LS11/4

Order Code: SDKIN-KVR16LS114

Category: PC System Memory (RAM)

1 x 4GB DDR3L 1600 1.35V Low Voltage Unbuffered Non-ECC SODIMM

Kingston Technology is the world's independent memory leader and is well-known for providing high quality memory products at an attractive price. Kingston ValueRAM is your best source for industry-standard memory to maximise the performance and productivity of your system. Built with A-grade components only, Kingston ValueRAM memory modules come with a lifetime warranty.

    Key Features

    JEDEC standard
    1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~
    1.575V) Power Supply

    = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)

    800MHz fCK for 1600Mb/sec/pin

    8 independent internal bank

    Programmable CAS Latency:
    11, 10, 9, 8, 7, 6

    Programmable Additive Latency:
    0, CL - 2, or CL - 1 clock

    8-bit pre-fetch

    Burst Length:
    8 (Interleave without any limit, sequential with
    starting address 000 only), 4 with tCCD = 4 which does not
    allow seamless read or write [either on the fly using A12 or MRS]

    Bi-directional Differential Data Strobe

    Internal(self) calibration : Internal self calibration through ZQ
    pin (RZQ : 240 ohm 1%)

    On Die Termination using ODT pin

    Average Refresh Period
    7.8us at lower than TCASE 85C,
    3.9us at 85C < TCASE
    < 95C

    Asynchronous Reset

    PCB: Height 1.18 (30mm), double sided component

    11 cycles

    Row Cycle Time (tRCmin)
    48.125ns (min.)

    Refresh to Active/Refresh
    260ns (min.)

    Row Active Time (tRASmin)
    35ns (min.)

    Maximum Operating Power
    (1.35V) = 2.376 W*

    UL Rating
    94 V - 0

    Operating Temperature
    0C to 85C

    Storage Temperature
    -55C to +100C

Business IT purchase over £1000? Spread the cost on a monthly basis with our flexible leasing options.

Technical Information

Internal memory type
Memory bus
64 bit
Module configuration
512M x 64
Lead plating
CAS latency
Memory clock speed
1600 MHz
Row cycle time
48.125 ns
Refresh row cycle time
260 ns
Row active time
35 ns
Memory voltage
1.35,1.5 V
Memory form factor
204-pin SO-DIMM
Component for
Internal memory
4 GB
Memory layout (modules x size)
1 x 4 GB
Buffered memory type
Unregistered (unbuffered)
Storage temperature (T-T)
-55 - 100 °C
Operating temperature (T-T)
0 - 85 °C
Internal memory
4096 MB
Bus clock rate
1600 MHz
Memory layout
1 x 4096 MB
Error indication
Chips organisation
30 mm
67.6 mm

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