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PC System Memory (RAM) | KINGSTON 4GB DDR3L 1600 1.35V Low Voltage SO-DIMM | KVR16LS11/4 | ServersPlus

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KINGSTON 4GB DDR3L 1600 1.35V Low Voltage SO-DIMM

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Manufacturer Part Code: KVR16LS11/4

Order Code: SDKIN-KVR16LS114

Category: PC System Memory (RAM)

1 x 4GB DDR3L 1600 1.35V Low Voltage Unbuffered Non-ECC SODIMM

Kingston Technology is the world's independent memory leader and is well-known for providing high quality memory products at an attractive price. Kingston ValueRAM is your best source for industry-standard memory to maximise the performance and productivity of your system. Built with A-grade components only, Kingston ValueRAM memory modules come with a lifetime warranty.

    Key Features

    JEDEC standard
    1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~
    1.575V) Power Supply

    = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)

    800MHz fCK for 1600Mb/sec/pin

    8 independent internal bank

    Programmable CAS Latency:
    11, 10, 9, 8, 7, 6

    Programmable Additive Latency:
    0, CL - 2, or CL - 1 clock

    8-bit pre-fetch

    Burst Length:
    8 (Interleave without any limit, sequential with
    starting address 000 only), 4 with tCCD = 4 which does not
    allow seamless read or write [either on the fly using A12 or MRS]

    Bi-directional Differential Data Strobe

    Internal(self) calibration : Internal self calibration through ZQ
    pin (RZQ : 240 ohm 1%)

    On Die Termination using ODT pin

    Average Refresh Period
    7.8us at lower than TCASE 85C,
    3.9us at 85C < TCASE
    < 95C

    Asynchronous Reset

    PCB: Height 1.18 (30mm), double sided component

    11 cycles

    Row Cycle Time (tRCmin)
    48.125ns (min.)

    Refresh to Active/Refresh
    260ns (min.)

    Row Active Time (tRASmin)
    35ns (min.)

    Maximum Operating Power
    (1.35V) = 2.376 W*

    UL Rating
    94 V - 0

    Operating Temperature
    0C to 85C

    Storage Temperature
    -55C to +100C

Business IT purchase over £1000? Spread the cost on a monthly basis with our flexible leasing options.

Technical Information

Internal memory type
Memory bus
64 bit
Module configuration
512M x 64
Lead plating
CAS latency
Memory clock speed
1600 MHz
Country of origin
Row cycle time
48.125 ns
Refresh row cycle time
260 ns
Row active time
35 ns
Memory voltage
1.35,1.5 V
Memory form factor
204-pin SO-DIMM
Component for
Internal memory
4 GB
Memory layout (modules x size)
1 x 4 GB
Buffered memory type
Unregistered (unbuffered)
Harmonized System (HS) code
Storage temperature (T-T)
-55 - 100 °C
Operating temperature (T-T)
0 - 85 °C
Internal memory
4096 MB
Bus clock rate
1600 MHz
Memory layout
1 x 4096 MB
Country of origin
Error indication
Chips organisation
Harmonized System (HS) code
30 mm
67.6 mm

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